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US 7,605,427 B2Granted
Field plate trench transistor
AssigneeInfineon Technologies AG
InventorFranz Hirler
Life of this patent
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Abstract
A field plate trench transistor has a semiconductor body which contains a plurality of trenches which are isolated from one another by mesa regions. The trenches contain gate electrodes for controlling a vertical flow of current through the semiconductor body. At least one portion of the gate electrodes are at source potential.
Claims15
A field plate trench transistor comprising:
- a semiconductor body containing a plurality of trenches which are isolated from one another by mesa regions, the trenches containing gate electrodes operable to control a vertical flow of current through the semiconductor body,
- wherein a first plurality of the gate electrodes is configured such that when a gate potential and a source potential are applied to the field plate trench transistor, the first plurality of the gate electrodes is at the source potential which differs from the gate potential, and the remaining gate electrodes which form a second plurality of the gate electrodes are configured such that when the gate potential and the source potential are applied to the field plate trench transistor, the second plurality of the gate electrodes are at the gate potential, and
- below the second plurality of the gate electrodes within the trenches there are field electrodes which are configured such that when the gate potential and the source potential are applied to the field plate trench transistor, the field electrodes are at the source potential.
A field plate trench transistor comprising
- a) a semiconductor body;
- b) a plurality of trenches contained in the semiconductor body, the plurality of trenches being isolated from one another by mesa regions, wherein the plurality of trenches contain
- i) first and second gate electrodes operable to control a vertical flow of current through the semiconductor body and
- ii) field electrodes which underlie the gate electrodes and are configured such that when a gate potential and a source potential are applied to the field plate trench transistor, the field electrodes are at the source potential;
- and
- wherein the first gate electrodes are insulated from the underlying field electrodes and are configured such that when the gate potential and the source potential are applied to the field plate trench transistor, the first gate electrodes are at the gate potential. and the second gate electrodes are configured such that when the gate potential and the source potential are applied to the field plate trench transistor, the second gate electrodes are at the source potential,
- wherein the first and second gate electrodes are electrically insulated from a source contact by means of an insulating layer, and
- wherein the first and second gate electrodes traverse source regions.
5 more elements
Dependencies are inferred from the claim text.