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US 7,605,425 B2Granted
Power MOS device
AssigneeAlpha and Omega Semiconductor Incorporated
InventorsAnup Bhalla, Sik Lui, Tiesheng Li
Life of this patent
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Abstract
A semiconductor device comprises a drain, a body disposed over the drain, having a body top surface, a source embedded in the body, extending downward from the body top surface into the body, a gate trench extending through the source and the body into the drain, a gate disposed in the gate trench, a source body contact trench having a trench wall and an anti-punch through implant that is disposed along the trench wall.
Claims16
A semiconductor device comprising:
- a drain;
- a body disposed over the drain, having a body top surface;
- a source embedded in the body, extending downward from the body top surface into the body;
- a gate trench extending through the source and the body into the drain;
- a gate disposed in the gate trench;
- and
- a source body contact trench having a trench wall, a trench bottom, and an anti-punch through implant that is disposed along the trench wall;
- wherein:
- the source body contact trench includes an electrode that is disposed within the source body contact trench;
- the electrode is at least in part in physical contact with the source and at least in part in physical contact with the anti-punch through implant;
- the anti-punch through implant is disposed along at least a section of the trench wall but not along at least a portion of the trench bottom.
8 more elements
Dependencies are inferred from the claim text.