Semiconductor tunneling magneto resistance device and method of manufacturing the same

A semiconductor device, comprising:

• a memory cell formed in a memory cell region over a semiconductor substrate and including a laminated structure of a lower electrode, a TMR film and an upper electrode, and said TMR film and said upper electrode are formed over a portion of said lower electrode;
• an antioxidant film covering an upper surface of the lower electrode and a side surface of the TMR film at least;
• a first silicon oxide film formed over the antioxidant film;
• a read wire formed under the lower electrode and separated by a predetermined distance from the TMR film, in a plan view;
• an interlayer insulating film formed above said read wire and under said lower electrode and having a first opening exposing an upper surface of said read wire;
• a first metal plug formed in said first opening over said read wire and electrically connecting said read wire and said lower electrode;
• and
• wherein said interlayer insulating film includes a first interlayer insulation film and a second interlayer insulation film formed over said first interlayer insulation film,
• said first interlayer insulation film includes a material different from said second interlayer insulation film, and
• said antioxidant film and said first interlayer insulation film include the same material.