Assemblies comprising magnetic elements and magnetic barrier or shielding at least partially around the magnetic elements
AssigneeMicron Technology, Inc.
InventorJoel A. Drewes
Life of this patent
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Abstract
The invention includes a method of forming a semiconductor construction, such as an MRAM construction. A block is formed over a semiconductor substrate. First and second layers are formed over the block, and over a region of the substrate proximate the block. The first and second layers are removed from over the block while leaving portions of the first and second layers over the region proximate the block. At least some of the first layer is removed from under the second layer to form a channel over the region proximate the block. A material, such as a soft magnetic material, is provided within the channel. The invention also includes semiconductor constructions.
Claims35
An assembly, comprising:
- a magnetic memory element supported over a substrate;
- the magnetic memory element comprising three materials;
- the three materials being, in ascending order from the substrate, a first material corresponding to a soft magnetic material, a second material corresponding to a non-magnetic material, and a third material corresponding to another soft magnetic material;
- the magnetic memory element having a vertical sidewall that extends along the first, second and third materials;
- the first, second and third materials being coplanar along said vertical sidewall;
- the vertical sidewall extending entirely around the magnetic memory element, and thus defining a lateral periphery of the magnetic memory element;
- and
- a magnetic barrier material extending substantially around the lateral periphery of the magnetic memory element;
- the magnetic barrier material being laterally offset from the memory element by at least one electrically insulative material;
- the magnetic barrier material vertically overlapping two of the three materials of the magnetic memory element.
An assembly, comprising:
- a magnetic memory element laterally surrounded by one or more materials;
- the magnetic memory element comprising a vertical stack of three structures;
- the three structures being a first structure corresponding to a soft magnetic substance, a second structure corresponding to a non-magnetic substance, and a third structure corresponding to another soft magnetic substance;
- the second structure being between the first and third structures;
- the magnetic memory element having a vertical sidewall along the first, second and third structures;
- the first, second and third structures being coplanar along said vertical sidewall;
- the vertical sidewall extending entirely around the magnetic memory element, and thus defining a lateral periphery of the magnetic memory element;
- a channel within the one or more materials and surrounding the lateral periphery of the magnetic memory element;
- and
- a magnetic shield extending within the channel and surrounding the lateral periphery of the magnetic memory element;
- the magnetic shield vertically overlapping two of the three structures of the magnetic memory element.
Dependencies are inferred from the claim text.