Semiconductor light-emitting device and fabrication method of the same

A semiconductor light-emitting device comprising:

• a transparent substrate;
• a first conductivity type nitride semiconductor layer formed above the transparent substrate;
• a nitride semiconductor light-emitting layer formed above the first conductivity type nitride semiconductor layer;
• a second conductivity type nitride semiconductor layer formed above the nitride semiconductor light-emitting layer, the second conductivity type being opposite to the first conductivity type;
• a notch region having a depth such that the notch region cuts the second conductivity type nitride semiconductor layer and the nitride semiconductor light-emitting layer and exposes the first conductivity type nitride semiconductor layer, the notch region defining a plurality of mesa active regions and a mesa electrode drawing region;
• an electrode for the first conductivity type including an ohmic electrode portion for the first conductivity type and a pad electrode portion for the first conductivity type, the ohmic electrode portion for the first conductivity type being formed on the first conductivity type nitride semiconductor layer that is exposed in the notch region surrounding the plurality of mesa active regions, the pad electrode portion for the first conductivity type continuously extending from the ohmic electrode portion for the first conductivity type to a region on the mesa electrode drawing region;
• ohmic electrodes for the second conductivity type formed on the second conductivity type nitride semiconductor layer in the plurality of mesa active regions;
• and
• a supporting substrate arranged to be opposed to the transparent substrate, the supporting substrate including a conductive connecting member for the first conductivity type that is opposed to and connected to the pad electrode portion for the first conductivity type, and a conductive connecting member for the second conductivity type that is opposed to and connected to the ohmic electrodes for the second conductivity type,
• the plurality of mesa active regions are arranged in a matrix in a light-emitting region;
• the mesa electrode drawing region is arranged in a plurality of regions outside the light-emitting region,
• the light-emitting region has a rectangular shape, and
• the mesa electrode drawing region is arranged outside the rectangular light-emitting region and in a region other than regions corresponding to central parts of sides of the rectangular light-emitting region, wherein
• the mesa electrode drawing region has a rectangular planar shape and is arranged outside a region corresponding to the central parts of the sides of the rectangular light-emitting region, and at regions near each corner of the rectangular light-emitting region.