CMOS sensor adapted for dental x-ray imaging

An image sensor comprising:

• an output bus;
• a two-dimensional array of pixel sensors, each pixel sensor comprising:
• a capacitor;
• a plurality of light sensors, each light sensor comprising a photodiode and a photodiode gate transistor for connecting said photodiode to said capacitor;
• a charge converter that generates an output signal on an output node, said output signal being determined by a charge on said capacitor;
• and
• a transfer gate that connects said output node to said output bus;
• and
• a layer of scintillation material adjacent to said array, said scintillation material emitting light in response to x-rays impinging thereon, said light being detected by said pixel sensors;
• wherein said charge converter comprises:
• a source follower having a gate connected to said output node and an output that is connected to a bit line in response to a row select signal;
• a gain switch for causing a capacitor to be connected between said output node and a power rail in response to a gain control signal and said row select signal;
• and
• a controller that monitors said bit line and generates said gain control signal if a potential on said bit line exceeds a threshold value.

An image sensor comprising:

• an output bus;
• a two-dimensional array of pixel sensors, each pixel sensor comprising:
• a capacitor;
• a plurality of light sensors, each light sensor comprising a photodiode and a photodiode gate transistor for connecting said photodiode to said capacitor;
• a charge converter that generates an output signal on an output node, said output signal being determined by a charge on said capacitor;
• and
• a transfer gate that connects said output node to said output bus;
• and
• a layer of scintillation material adjacent to said array, said scintillation material emitting light in response to x-rays impinging thereon, said light being detected by said pixel sensors;
• wherein said pixel sensors further comprise a comparator that compares a voltage on said output node with a reference voltage, said photodiode gate transistors that are placed in said conductive state being determined by an output signal generated by said comparator.

An image sensor comprising:

• an output bus;
• a two-dimensional array of pixel sensors, each pixel sensor comprising:
• a capacitor;
• a plurality of light sensors, each light sensor comprising a photodiode and a photodiode gate transistor for connecting said photodiode to said capacitor;
• a charge converter that generates an output signal on an output node, said output signal being determined by a charge on said capacitor;
• and
• a transfer gate that connects said output node to said output bus;
• a layer of scintillation material adjacent to said array, said scintillation material emitting light in response to x-rays impinging thereon, said light being detected by said pixel sensors;
• and
• a controller that reads out data stored in said array of pixel sensors, said controller causing selected ones of said photodiode gate transistors to enter a conductive state in each of said pixel sensors to transfer charge from said photodiode to said capacitor, and then operating said transfer gates to connect said output signal of each of said pixel sensors to said output bus, wherein at least one of said pixel sensors has two photodiode gate transistors in said conductive state during said readout;
• wherein said controller also outputs a value specifying the number of said photodiode gate transistors that were in said conductive state during said readout.

A method for generating an x-ray image, said method comprising:

• providing a layer of scintillation material overlying a two-dimensional array of pixel sensors in which each pixel sensor comprises a plurality of light sensors, each light sensor comprising a photodiode and a photodiode gate transistor for connecting said photodiode to a capacitor in said pixel sensor;
• exposing said layer of scintillation material to an x-ray image;
• generating data indicative of a charge stored in said pixel sensors, wherein said data is generated for each pixel sensor by;
• transferring charge from said photodiodes in said pixel sensor to a capacitor in said pixel sensor;
• converting said transferred charge to a signal representative of said transferred charge;
• and
• transferring said signal to a bus in said array of pixel sensors,
• wherein at least one of said pixel sensors charge is transferred from a plurality of photodiodes prior to converting said transferred charge;
• and
• wherein said photodiodes are pinned photodiodes, of size no greater than 6 μm by 6 μm;
• and
• wherein each of said pixel sensors has a light sensing area significantly greater than 36 μm2.

A method for generating an x-ray image, said method comprising:

• providing a layer of scintillation material overlying a two-dimensional array of pixel sensors in which each pixel sensor comprises:
• a plurality of light sensors, each sensor comprising a photodiode and a photodiode gate transistor for connecting said photodiode to a capacitor in said pixel sensor;
• exposing said layer of scintillation material to an x-ray image;
• generating data indicative of a charge stored in said pixel sensors, wherein said data is generated for each pixel sensor by;
• transferring charge from said photodiodes in said pixel sensor to a capacitor in said pixel sensor;
• converting said transferred charge to a signal representative of said transferred charge;
• and
• transferring said signal to a bus in said array of pixel sensors,
• wherein at least one of said pixel sensors charge is transferred from a plurality of photodiodes prior to converting said transferred charge;
• and
• wherein said charge stored in each photodiode is selectively transferred to said capacitor depending on a charge already on said capacitor and wherein a signal representing the number of photodiodes for which charge was transferred to said capacitor is also output on said bus.

A method for generating an x-ray image, said method comprising:

• providing a layer of scintillation material overlying a two-dimensional away of pixel sensors in which each pixel sensor comprises a plurality of light sensors, each sensor comprising a photodiode and a photodiode gate transistor for connecting said photodiode to a capacitor in said pixel sensor;
• exposing said layer of scintillation material to an x-ray image;
• generating data indicative of a charge stored in said pixel sensors, wherein said data is generated for each pixel sensor by:
• transferring charge from said photodiodes in said pixel sensor to a capacitor in said pixel sensor;
• converting said transferred charge to a signal representative of said transferred charge;
• transferring said signal to a bus in said array of pixel sensors, and
• altering the gain of a charge to voltage converter in said pixel in response to a measurement of said signal on said bus;
• wherein at least one of said pixel sensors charge is transferred from a plurality of photodiodes prior to converting said transferred charge.