Color sensor, production method thereof, sensor, and electronics device
AssigneeSharp Kabushiki Kaisha
InventorJunichiro Koyama
Life of this patent
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Abstract
A color sensor of the present invention is arranged such that (i) an interference filter is provided directly above light receiving elements so as to transmit incoming light having a predetermined wavelength of the incoming light, and color filters are provided directly on the interference filter, or (ii) the color filters are provided directly above the light receiving element, and the interference filter is provided directly on the color filters so as to transmit incoming light having a predetermined wavelength of the incoming light.
Claims8
A color sensor comprising:
- a plurality of color filters, provided side by side, transmitting incident light;
- and
- light receiving elements, respectively corresponding to the color filters, each converting the incident light into an electrical signal,
- the color sensor further comprising:
- an interference filter, provided directly above the light receiving elements, transmitting light having a predetermined wavelength of the incident light;
- and
- the color filters being provided directly on the interference filter,
- the light receiving elements being a plurality of photodiodes each formed by (i) producing a first conductive silicon epitaxial wafer by forming an epitaxial layer with a use of an epitaxial growth and (ii) forming a second conductive layer from a surface of the epitaxial layer of the silicon epitaxial wafer into the epitaxial layer,
- the second conductive layer having a center region and a frame-like periphery section that is formed so as to be deeper than the center region.
A sensor comprising a color sensor including:
- a plurality of color filters, provided side by side, transmitting incident light;
- light receiving elements, respectively corresponding to the color filters, each converting the incident light into an electrical signal;
- and an interference filter, provided directly above the light receiving elements, transmitting light having a predetermined wavelength of the incident light, the color filters being provided directly on the interference filter,
- the light receiving elements being a plurality of photodiodes each formed by (i) producing a first conductive silicon epitaxial wafer by forming an epitaxial layer with a use of an epitaxial growth and (ii) forming a second conductive layer from a surface of the epitaxial layer of the silicon epitaxial wafer into the epitaxial layer,
- the second conductive layer having a center region and a frame-like periphery section that is formed so as to be deeper than the center region.
An electronics device comprising a color sensor including:
- a plurality of color filters, provided side by side, transmitting incident light;
- light receiving elements, respectively corresponding to the color filters, each converting the incident light into an electrical signal;
- and an interference filter, provided directly above the light receiving elements, transmitting light having a predetermined wavelength of the incident light, the color filters being provided directly on the interference filter,
- the light receiving elements being a plurality of photodiodes each formed by (i) producing a first conductive silicon epitaxial wafer by forming an epitaxial layer with a use of an epitaxial growth and (ii) forming a second conductive layer from a surface of the epitaxial layer of the silicon epitaxial wafer into the epitaxial layer,
- the second conductive layer having a center region and a frame-like periphery section that is formed so as to be deeper than the center region.
Dependencies are inferred from the claim text.