Photovoltaic thin-film cell produced from metallic blend using high-temperature printing
AssigneeNanosolar, Inc.
InventorsBrian M. Sager, Martin R. Roscheisen
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Abstract
The metallic components of a IB-IIIA-VIA photovoltaic cell active layer may be directly coated onto a substrate by using relatively low melting point (e.g., less than about 500° C.) metals such as indium and gallium. Specifically, CI(G)S thin-film solar cells may be fabricated by blending molten group IIIA metals with solid nanoparticles of group IB and (optionally) group IIIA metals. The molten mixture may be coated onto a substrate in the molten state, e.g., using coating techniques such as hot-dipping, hot microgravure and/or air-knife coating. After coating, the substrate may be cooled and the film annealed, e.g., in a sulfur-containing or selenium-containing atmosphere.
Claims44
A method for forming an active layer coating, the method comprising the steps of:
- forming a molten mixture of one or more metals of group IIIA and metallic nanoparticles containing elements of group IB;
- subsequently depositing the molten mixture on a substrate to form a film;
- and
- processing the film in one or more steps to form a photovoltaic absorber layer.
A method for forming an active layer coating, the method comprising the steps of:
- forming a molten mixture of one or more metals of group IIIA and metallic nanoparticles containing elements of group IB;
- subsequently depositing the molten mixture on a substrate to form a film;
- processing the film in one or more steps to form a photovoltaic absorber layer;
- and
- incorporating one or more elements of Group VIA into the film.
A method for forming an active layer coating, the method comprising the steps of :
- forming a molten mixture of one or more metals of group IIIA and metallic nanoparticles containing elements of group IB;
- subsequently depositing the molten mixture on a substrate to form a film;
- and
- processing the film in one or more steps to form a photovoltaic absorber layer;
- wherein processing comprises annealing the film to form an annealed film and then exposing the annealed film to group VIA vapor.
Dependencies are inferred from the claim text.