Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
AssigneeAdvanced Technology Materials, Inc.
InventorsWilliam A. Wojtczak, Ma. Fatima Seijo, David Bernhard, Long Nguyen
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Abstract
A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
Claims22
A method of making an integrated circuit containing a copper containing substrate, comprising cleaning said substrate with a wafer cleaning formulation having a pH greater than 7, wherein said cleaning reduces the amount of contamination on the integrated circuit concomitantly improving device performance, and wherein said wafer cleaning formulation comprises a fluoride source and a nitrogen-containing carboxylic acid or an imine selected from the group consisting of:
- iminodiacetic acid (IDA),
- glycine,
- 1,1,3,-tetramethylguanidine (TMG),
- CH3C(═NCH2CH2OH)CH2C(O)N(CH3)2,
- CH3C(═NCH2CH2OCH2CH2OH)CH2C(O)N(CH3)2,
- CH3C(═NH)CH2C(O)CH3,
- (CH3CH2)2NC(═NH)N(CH3CH2)2,
- HOOCCH2N(CH3)2, and
- HOOCCH2N(CH3)CH2COOH.
A method of making an integrated circuit containing a copper containing substrate, comprising cleaning said substrate with a wafer cleaning formulation, wherein said cleaning reduces the amount of contamination on the integrated circuit concomitantly improving device performance, and wherein said wafer cleaning formulation comprises an amine, a fluoride source and a nitrogen-containing carboxylic acid or an imine, wherein the nitrogen-containing carboxylic acid or an imine is selected from the group consisting of:
- iminodiacetic acid (IDA),
- glycine,
- nitrilotriacetic acid (NTA),
- hydroxyethyliminodiacetic acid,
- 1,1,3,-tetramethylguanidine (TMG),
- CH3C(═NCH2CH2OH)CH2C(O)N(CH3)2,
- CH3C(═NCH2CH2OCH2CH2OH)CH2C(O)N(CH3)2,
- CH3C(═NH)CH2C(O)CH3,
- (CH3CH2)2NC(═NH)N(CH3CH2)2,
- HOOCCH2N(CH3)2, and
- HOOCCH2N(CH3)CH2COOH;
- and wherein the amine is selected from the group consisting of:
- methyldiethanolamine (MDEA),
- pentamethyldiethylenetriamine (PMIDETA),
- triethanolamine (TEA),
- triethylenediamine (TEDA),
- hexamethylenetetramine,
- 3,3-iminobis (N,N-dimethylpropylamine),
- 2-(methylamino)ethanol,
- 4-(2-hydroxyethyl)morpholine,
- 4-(3-aminopropyl)morpholine, and
- N,N-dimethyl-2-(2-aminoethoxy)ethanol.
Dependencies are inferred from the claim text.