Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device having a through electrode that connects an electrode pad of a semiconductor element, which has a device forming layer and the electrode pad on one surface side, and the other surface side of the semiconductor element, comprising:

• a first step of forming a first resist layer on surfaces of the electrode pad and the device forming layer on said one surface side of the semiconductor element;
• a second step of forming an opening in the electrode pad by an etching and forming a second resist layer on an inner periphery of the opening in the electrode pad;
• a third step of forming a through hole, one end of which is communicated with the opening and other end of which is opened on the other surface side of the semiconductor element, in the semiconductor element by an etching;
• a fourth step of forming the through electrode in the through hole;
• a fifth step of pasting a protection film on a surface of the second resist layer;
• and
• a sixth step of forming an insulating layer from other surface side of the semiconductor element to spread the insulating layer on an inner peripheral of the through hole, which extends to the one surface side of the semiconductor element, and a lower surface of the protection film.