Method for fabricating semiconductor device with gate
AssigneeHynix Semiconductor Inc.
InventorsTae-Woo Jung, Young-Hun Bae
Life of this patent
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Abstract
A method for fabricating a semiconductor device with a gate is provided. The method includes: forming a gate insulation layer over a substrate; sequentially forming a polysilicon layer, a silicide layer and a hard mask layer over the gate insulation layer; selectively patterning the hard mask layer; etching the silicide layer using the patterned hard mask layer as a mask such that the silicide layer has a cross-sectional etch profile that is negatively sloped; etching the polysilicon layer using the patterned hard mask layer as a mask to form a gate; and performing a light oxidation process to oxidize exposed sidewalls of the polysilicon layer and the silicide layer.
Claims15
A method for fabricating a semiconductor device comprising:
- forming a gate insulation layer over a substrate;
- sequentially forming a polysilicon layer, a silicide layer and a hard mask layer over the gate insulation layer;
- selectively patterning the hard mask layer;
- etching the silicide layer using the patterned hard mask layer as a mask such that the silicide layer has a cross-sectional etch profile that is negatively sloped;
- etching the polysilicon layer using the patterned hard mask layer as a mask to form a gate;
- and
- performing a re-oxidation process to oxidize exposed sidewalls of the polysilicon layer and the silicide layer,
- wherein the etching of the silicide layer includes:
- performing a main etching process until the polysilicon layer is exposed;
- and
- over etching the silicide layer when the polysilicon layer is exposed so that the silicide layer has the negatively sloped etch profile in the form of an undercut.
A method for fabricating a semiconductor device comprising:
- forming a gate insulation layer over a substrate;
- sequentially forming a polysilicon layer, a tungsten silicide layer and a hard mask layer over the gate insulation layer;
- selectively patterning the hard mask layer;
- etching the tungsten silicide layer using the patterned hard mask layer as a mask such that the tungsten silicide layer has a cross-sectional etch profile that is negatively sloped;
- etching the polysilicon layer using the patterned hard mask layer as a mask to form a gate;
- and
- performing a re-oxidation process to oxidize exposed sidewalls of the polysilicon layer and the tungsten silicide layer,
- wherein the etching of the tungsten silicide layer includes:
- performing a main etching process until the polysilicon layer is exposed;
- and
- over etching the tungsten silicide layer when the polysilicon layer is exposed so that the negatively sloped etch profile is in the form of an undercut.
Dependencies are inferred from the claim text.