Semiconductor device and method of manufacturing the semiconductor device

A method of manufacturing a semiconductor device,

• forming, in a semiconductor substrate, a drain region, a source region, an impurity region of a first conductive type for discharging an electric charge stored in a gate electrode to the semiconductor substrate and an impurity region of a second conductive type opposite to the first conductive type for discharging the electric charge stored in the gate electrode to the semiconductor substrate;
• forming the gate electrode;
• forming a first wiring connecting the gate electrode to the impurity region of the first conductive type;
• forming a second wiring connecting the first wiring to the impurity region of the second conductive type;
• disconnecting the first and second wiring after forming the second wiring by
• forming a first fuse disconnecting terminal to be connected to a first fuse;
• forming a second fuse disconnecting terminal to be connected to a second fuse;
• applying a voltage to the second fuse disconnecting terminal to disconnect the second fuse;
• and
• applying a voltage to the first fuse disconnecting terminal to disconnect the first fuse.