Method of forming a device wafer with recyclable support

A method for forming a device wafer with a recyclable support comprising:

• providing a wafer having first and second surfaces, with at least the first surface of the wafer comprising a semiconductor material that is suitable for receiving or forming electronic devices thereon;
• providing a supporting substrate having upper and lower surfaces;
• providing the second surface of the wafer or the upper surface of the supporting substrate with void features, wherein the void features are provided by forming a plurality of holes through the supporting substrate in an amount sufficient to enable a connecting bond therebetween to form a construct wherein the bond is formed at an interface between the wafer and the substrate and is suitable to maintain the wafer and supporting substrate in association while forming or applying electronic devices to the first surface of the wafer, but which connecting bond is severable at the interface due to the plurality of holes to separate the substrate from the wafer, wherein the plurality of holes are configured to receive at least one loosening agent therethrough for weakening the connecting bond between the wafer and the substrate at the interface;
• coating the supporting substrate with a layer of material after providing the holes therein to prevent premature loosening or separation during device fabrication;
• and
• etching the coating prior to applying the loosening agent.

A method for forming a device wafer with a recyclable support which comprises:

• providing a wafer having first and second surfaces, with at least the first surface of the wafer comprising a semiconductor material that is suitable for receiving or forming electronic devices thereon;
• providing a supporting substrate having upper and lower surfaces;
• providing the second surface of the wafer or the upper surface of the supporting substrate with a plurality of holes through the supporting substrate, wherein the plurality of holes have diameters between about 25 microns and about 100 microns, are provided in an amount sufficient to enable a connecting bond to form at an interface between the wafer and the substrate, and are configured to receive at least one loosening agent therethrough for weakening the connecting bond between the wafer and the substrate at the interface;
• forming the connecting bond at the interface between the second surface of the wafer and the upper surface of the supporting substrate to form a construct, wherein the connecting bond is suitable to maintain the wafer and supporting substrate in association while forming or applying electronic devices to the first surface of the wafer but is severable at the interface due to the void features provided;
• and
• thereafter holding the construct and applying a pressure differential to the interface through the holes of the substrate in an amount sufficient to detach and separate the wafer from the supporting substrate so that the substrate can be reused.

A method for forming a device wafer with a recyclable support which comprises:

• providing a wafer having first and second surfaces, with at least the first surface of the wafer comprising a semiconductor material that is suitable for receiving or forming electronic devices thereon;
• providing a supporting substrate having upper and lower surfaces;
• providing the second surface of the wafer or the upper surface of the supporting substrate with a plurality of holes through the supporting substrate, wherein the plurality of holes have diameters between about 25 microns and about 100 microns, are provided in an amount sufficient to enable a connecting bond to form at an interface between the wafer and the substrate, and are configured to receive at least one loosening agent therethrough for weakening the connecting bond between the wafer and the substrate at the interface;
• forming the connecting bond at the interface between the second surface of the wafer and the upper surface of the supporting substrate to form a construct, wherein the connecting bond is suitable to maintain the wafer and supporting substrate in association while forming or applying electronic devices to the first surface of the wafer but is severable at the interface due to the void features provided;
• positioning the wafer and substrate in a vacuum to further weaken the connecting bond between the wafer and the substrate at the interface;
• and
• severing the connecting bond at the interface to detach and separate the substrate from the wafer so that the substrate can be reused.