Method of forming an integrated circuit having a device wafer with a diffused doped backside layer
AssigneeIntersil Corporation
InventorsJoseph A. Czagas, Dustin A. Woodbury, James D. Beasom
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Abstract
A method for forming a diffused, doped backside layer on a device wafer oxide bonded to a handle wafer in an integrated circuit is provided. The method comprises forming a thermal bond oxide layer on a backside surface of the device wafer of the integrated circuit. Implanting the bond oxide with a diffusing dopant. Diffusing dopant from the bond oxide into the backside surface of the device wafer. Depositing an oxide layer on the bond oxide and bonding the deposited oxide layer to the handle wafer of the integrated circuit.
Claims15
A method for forming a diffused, doped backside layer on a device wafer oxide bonded to a handle wafer in an integrated circuit, the method comprising:
- forming a thermal bond oxide layer on a backside surface of the device wafer of the integrated circuit;
- implanting the bond oxide with a diffusing dopant;
- diffusing dopant from the bond oxide into the backside surface of the device wafer;
- depositing an oxide layer on the bond oxide;
- and
- bonding the deposited oxide layer to the handle wafer of the integrated circuit.
A method for forming a diffused, doped backside layer on a device wafer oxide bonded to a handle wafer in an integrated circuit, the method comprising:
- forming an oxide layer on a backside surface of the device wafer of the integrated circuit;
- implanting a diffusing dopant into the oxide formed on the backside of the device wafer;
- forming an oxide layer on a surface of the handle wafer of the integrated circuit;
- bonding the oxide side of the device wafer to the oxide side of the handle wafer;
- and
- diffusing dopant from the oxide of the device wafer into the backside of the device wafer.
A method for forming a diffused, doped backside layer on a device wafer oxide bonded to a handle wafer in an integrated circuit, the method comprising:
- forming a thermal bond oxide layer on a backside surface of the device wafer of the integrated circuit;
- implanting the bond oxide with a diffusing dopant;
- diffusing dopant from the bond oxide into the backside surface of the device wafer;
- depositing a silicon layer on the bond oxide;
- oxidizing the silicon layer to increase the thickness of the bond oxide;
- and
- bonding the device wafer to the handle wafer of the integrated circuit.
Dependencies are inferred from the claim text.