Optical semiconductor device and manufacturing method for same
AssigneePanasonic Corporation
InventorsMasaki Taniguchi, Hisatada Yasukawa, Takaki Iwai, Ryoichi Ito
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Abstract
A transistor that forms an integrated circuit, a photo detector and a micromirror are mounted on the same semiconductor substrate in an optical semiconductor device of the present invention, which has an antireflection film that is formed on the photo detector, a first insulating film which is formed on the antireflection film and in which an opening is created in the state where the antireflection film is exposed, and an etching stopping film which is formed on the first insulating film and which has been left in the periphery around the opening in the first insulating film on the antireflection film and in the periphery around the portion above the micromirror.
Claims9
A manufacturing method for an optical semiconductor device where an integrated circuit, a photo detector and a micromirror are integrated on a mono-substrate, comprising:
- a step of forming an antireflection film on the photo detector;
- a step of forming an insulating film on the antireflection film;
- a step of forming an etching stopping film on the insulating film;
- a step of forming an interlayer insulating film on the etching stopping film;
- and
- a step of creating first openings in the interlayer insulating film above the photo detector and above a micromirror region where the micromirror is to be formed such that the etching stopping film is exposed,
- wherein in the step of creating first openings, the etching stopping film in the first openings remains unetched.
Dependencies are inferred from the claim text.