Method for the integration of two bipolar transistors in a semiconductor body, semiconductor arrangement in a semiconductor body, and cascode circuit

A method for integrating two bipolar transistors in a semiconductor body, the method comprising the steps of:

• providing, for a first bipolar transistor, a first emitter semiconductor region, a first base semiconductor region, and a first collector semiconductor region;
• applying a recombination layer to the first bipolar transistor, which is adjacent to a first emitter semiconductor region or a first collector semiconductor region and is formed so that charge carriers recombine on the recombination layer;
• and
• providing a second bipolar transistor on the recombination layer, the second bipolar transistor including a second emitter semiconductor region, a second base semiconductor region, and a second collector semiconductor region,
• wherein the second bipolar transistor is provided on the recombination layer so that the second emitter semiconductor region or the second collector semiconductor region is adjacent to the recombination layer, and
• wherein a silicide layer is formed as the recombination layer, an amorphous semiconductor layer is applied both to the silicide layer and also to an exposed monocrystalline semiconductor region adjacent to the silicide layer, and during a subsequent temperature treatment, the amorphous semiconductor layer is crystallized proceeding from the exposed monocrystalline semiconductor area, which acts as a crystallization nucleus, so that the silicide layer is covered at least partially by a crystallized monocrystalline semiconductor layer.