Active matrix structure for a display device and method for its manufacture

A method for forming an active matrix structure, comprising the steps of:

• a) providing a substrate with at least one row line and at least one column line and creating a plurality of passages through the substrate to at least one row line each passage being located in between two adjacent column lines wherein each passage defines a center of a pixel area;
• b) depositing a layer of p-silicon on the substrate;
• c) creating an n+-doped region for each pixel area in the layer of p-silicon, wherein said n+-doped region extends from the passage to a surface of said layer of p-silicon, and creating a p+-doped region within said n+-doped region such that a layer of said n+-doped region remains and said p+-doped region reaches the surface of said n+-doped region;
• and
• d) depositing a layer made of a material which has particles of electronic ink contained therein, or an organic light-emitting diode layer on said surface of said layer of p-silicon and said n+-doped and said p+-doped regions.

A method for forming an active matrix structure having a plurality of pixel areas, comprising the steps of:

• a) providing a matrix substrate with a plurality of row lines and column lines and
• creating passages through the matrix substrate above each row line in between adjacent column lines;
• b) depositing a layer of p-silicon on the matrix substrate;
• c) creating an n+-doped region for each pixel area in the p-silicon, wherein said n+-doped region is provided from the passage as far as a free surface of said layer of p-silicon, and creating a p+-doped region within said n+-doped region such that a layer of said n+-doped region remains and said p+-doped region reaches a free surface of said n+-doped region;
• and
• d) applying a layer made of a matrix material which has particles of electronic ink contained therein, or an organic light-emitting diode layer on free surfaces of said layer of p-silicon and said n+-doped and said p+-doped regions.