Semiconductor device and manufacturing method for the same
AssigneeKabushiki Kaisha Toshiba
InventorMasafumi Hamaguchi
Life of this patent
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Abstract
A semiconductor device includes a first diffusion region including germanium atoms and first impurity atoms, provided on a surface layer of a semiconductor substrate, the first impurity atoms contributing to electric conductivity, and a second diffusion region including second impurity atoms, provided shallower than the first diffusion region from a surface of the first diffusion region, the second impurity atoms not contributing to the electric conductivity.
Claims20
A manufacturing method for a semiconductor device, comprising:
- forming an amorphous region in a surface region of a semiconductor substrate by implanting one of germanium ions and silicon ions;
- implanting ions of first impurity atoms into the amorphous region, the first impurity atoms contributing to electric conductivity;
- implanting ions of second impurity atoms into the amorphous region, the second impurity atoms not contributing to the electric conductivity;
- and
- activating the ions of the first impurity atoms by annealing the surface region of the semiconductor substrate,
- wherein the first impurity atoms are boron atoms and the second impurity atoms are fluorine atoms.
A manufacturing method for a semiconductor device, comprising:
- forming an amorphous region in a surface region of a semiconductor substrate by implanting one of germanium ions and silicon ions;
- implanting ions of first impurity atoms into the amorphous region, the first impurity atoms contributing to electric conductivity;
- implanting ions of second impurity atoms into the amorphous region, the second impurity atoms not contributing to the electric conductivity;
- and
- activating the ions of the first impurity atoms by annealing the surface region of the semiconductor substrate,
- wherein the first impurity atoms are boron difluoride atoms and the second impurity atoms are fluorine atoms.
A manufacturing method for a semiconductor device, comprising:
- forming an amorphous region in a surface region of a semiconductor substrate by implanting one of germanium ions and silicon ions;
- implanting ions of first impurity atoms into the amorphous region, the first impurity atoms contributing to electric conductivity;
- implanting ions of second impurity atoms into the amorphous region, the second impurity atoms not contributing to the electric conductivity;
- and
- activating the ions of the first impurity atoms by annealing the surface region of the semiconductor substrate,
- wherein the first impurity atoms are boron difluoride atoms,
- wherein the second impurity atoms are nitrogen atoms, and
- wherein a dose ratio of the first impurity atoms to the second impurity atoms is greater than one.
Dependencies are inferred from the claim text.