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US 7,605,030 B2Granted
Hafnium tantalum oxynitride high-k dielectric and metal gates
AssigneeMicron Technology, Inc.
InventorsLeonard Forbes, Kie Y. Ahn, Arup Bhattacharyya
Life of this patent
Estimating the term…
Abstract
Electronic apparatus and methods may include a hafnium tantalum oxynitride film on a substrate for use in a variety of electronic systems. The hafnium tantalum oxynitride film may be structured as one or more monolayers. The hafnium tantalum oxynitride film may be formed using atomic layer deposition. Metal electrodes may be disposed on a dielectric containing a hafnium tantalum oxynitride film.
Claims24
A method comprising:
- forming a sacrificial carbon layer over a non-sacrificial layer, the non-sacrificial layer including HfxTayOzNw, with x, y, z, and w being greater than zero, the HfxTayOzNw formed by applying a self-limiting monolayer or partial monolayer sequencing process during the fabrication of the HfxTayOzNw;
- forming a sacrificial carbon spacer adjacent to the sacrificial carbon layer;
- replacing the sacrificial carbon spacer with a substantially carbon-free layer;
- and
- replacing the sacrificial carbon layer with a layer that includes a metal.
2 more elements
A method comprising:
- forming a sacrificial carbon layer over a non-sacrificial layer, the non-sacrificial layer including at least one of a refractory nitride, a refractory oxide, and a refractory oxynitride;
- forming a sacrificial carbon spacer adjacent to the sacrificial carbon layer;
- replacing the sacrificial carbon spacer with a substantially carbon-free layer;
- and
- replacing the sacrificial carbon layer with a layer that includes a metal, wherein forming a sacrificial carbon layer includes forming a sacrificial carbon layer over a composite layer wherein the composite layer comprises at least two layers of a HfN, a HfO2, a HfON, a TaN, a Ta2O5, a TaON, and a HfxTayOzNw, where x,y,z, and w are atomic mole fractions where x+y+z+w=1.
2 more elements
A method comprising:
- forming a sacrificial carbon layer over a non-sacrificial layer, the non-sacrificial layer including at least one of a refractory nitride, a refractory oxide, and a refractory oxynitride;
- forming a sacrificial carbon spacer adjacent to the sacrificial carbon layer;
- replacing the sacrificial carbon spacer with a substantially carbon-free layer;
- and
- replacing the sacrificial carbon layer with a layer that includes a metal, wherein forming the non-sacrificial layer including forming a nanolaminate comprising at least two of TaN, Ta2O5, or TaON.
2 more elements
A method comprising:
- forming a composite layer including HfxTayOzNw, with x, y, z, and w being greater than zero, the HfxTayOzNw formed by applying a self-limiting monolayer or partial monolayer sequencing process during the fabrication of the HfxTayOzNw;
- forming a sacrificial carbon layer adjacent the composite layer,
- forming a sacrificial carbon spacer adjacent the sacrificial carbon layer;
- substituting a non-carbon layer for the sacrificial carbon spacer;
- and
- replacing the sacrificial carbon layer with a layer that includes a metal.
3 more elements
A method comprising:
- forming a composite layer including a refractory metal;
- forming a sacrificial carbon layer adjacent the composite layer,
- forming a sacrificial carbon spacer adjacent the sacrificial carbon layer;
- substituting a non-carbon layer for the sacrificial carbon spacer;
- and
- replacing the sacrificial carbon layer with a layer that includes a metal, wherein forming a composite layer including a refractory metal includes forming a layer of HfxTayOzNw, where x, y, z, and w are atomic concentrations, and where x+y+z+w=1.
3 more elements
A method comprising:
- forming a composite layer including a refractory metal;
- forming a sacrificial carbon layer adjacent the composite layer,
- forming a sacrificial carbon spacer adjacent the sacrificial carbon layer;
- substituting a non-carbon layer for the sacrificial carbon spacer;
- and
- replacing the sacrificial carbon layer with a layer that includes a metal, wherein forming a composite layer includes forming a nanolaminate, wherein forming a nanolaminate includes alternatingly forming at least one of HfN, HfO2, or HfON, and at least one of TaN, Ta2O5or TaON.
3 more elements
A method comprising:
- forming a composite layer including a refractory metal;
- forming a sacrificial carbon layer adjacent the composite layer,
- forming a sacrificial carbon spacer adjacent the sacrificial carbon layer;
- substituting a non-carbon layer for the sacrificial carbon spacer;
- and
- replacing the sacrificial carbon layer with a layer that includes a metal, wherein forming a composite layer includes forming a nanolaminate, wherein forming a composite layer includes forming one of TaN/HfN, TaN/HfON, TaON/HfN, TaON/HfON, TaN/HfO2, Ta2O5/HfN, TaON/HfO2, Ta2O5/HfON, or Ta2O5/HfO2.
3 more elements
Dependencies are inferred from the claim text.