Methods of manufacturing a three-dimensional semiconductor device and semiconductor devices fabricated thereby
AssigneeSamsung Electronics Co., Ltd.
InventorsYong-Won Cha, Dong-Chul Suh, Dae-Lok Bae
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Abstract
A method of fabricating a three-dimensional semiconductor device is provided along with a three-dimensional semiconductor device fabricated thereby. The method includes forming a heat conductive plug to channel heat away from devices on a substrate, while high temperature processes are performed on a stacked semiconductor layer. The ability to use high temperature processes on the stacked semiconductor layer without adversely effecting devices on the substrate allows the formation of a high quality single-crystalline stacked semiconductor layer. The high quality single-crystalline semiconductor layer can then be used to fabricate improved thin film transistors.
Claims26
A method of manufacturing a semiconductor device comprising:
- forming an insulation layer on a first semiconductor substrate;
- forming an opening through the insulation layer, the opening exposing a region of the first semiconductor substrate;
- forming a heat conductive plug in the opening;
- forming a separation layer in a second semiconductor substrate, the separation layer separating a surface layer and a bulk layer on the second semiconductor substrate;
- bonding the insulation layer of the first substrate to the surface layer of the second substrate;
- delaminating the bulk layer from the surface layer at the separation layer;
- heat treating the surface layer while conducting heat away from the surface layer primarily through the heat conductive plug into the first semiconductor substrate;
- and
- forming an upper device on the surface layer.
A method of manufacturing a semiconductor device, the method comprising:
- forming a lower device in a first region of a first semiconductor substrate;
- forming an insulation layer on the first semiconductor substrate, the insulation layer having the lower device therein;
- forming an opening through the insulation layer, exposing a second region of the first semiconductor substrate;
- forming a heat conductive plug in the opening, the heat conductive plug having a higher heat conductivity than the insulation layer;
- forming a separation layer in a second semiconductor substrate, wherein the separation layer separates a surface layer and a bulk layer on the second semiconductor substrate and the surface layer comprises a single-crystalline material;
- performing a surface treatment on the insulation layer and the surface layer, wherein the surface treatment creates a hydrophilic surface on the insulation layer and the surface layer;
- bonding the insulation layer to the surface layer;
- delaminating the bulk layer from the surface layer at the separation layer;
- heat treating the surface layer to remove any artifacts of the forming of and delaminating at the separation layer from the surface layer, wherein heat treating comprises:
- placing the first semiconductor substrate on a cooling stage;
- and
- applying heat to the surface layer thereby channeling heat away from the surface layer through the heat conductive plug into the first semiconductor substrate toward the cooling stage;
- and
- then, forming an upper device on the surface layer.
Dependencies are inferred from the claim text.