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AssigneeNissan Motor Co., Ltd.
InventorsTetsuya Hayashi, Masakatsu Hoshi, Hideaki Tanaka, Shigeharu Yamagami
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Methods of manufacturing a semiconductor device and resulting products. The semiconductor device includes a semiconductor substrate, a hetero semiconductor region hetero-adjoined with the semiconductor substrate, a gate insulation layer contacting the semiconductor substrate and a heterojunction of the hetero semiconductor region, a gate electrode formed on the gate insulation layer, an electric field alleviation region spaced apart from a heterojunction driving end of the heterojunction that contacts the gate insulation layer by a predetermined distance and contacting the semiconductor substrate and the gate insulation layer, a source electrode contacting the hetero semiconductor region and a drain electrode contacting the semiconductor substrate. A mask layer is formed on the hetero semiconductor region, and the electric field alleviation region and the heterojunction driving end are formed by using at least a portion of the first mask layer.
A method of manufacturing a semiconductor device including a semiconductor substrate, a hetero semiconductor region formed of a semiconductor material having a band gap width different from that of the semiconductor substrate and hetero-adjoined with the semiconductor substrate, a gate insulation layer contacting the semiconductor substrate and a heterojunction of the hetero semiconductor region, a gate electrode formed on the gate insulation layer, a first electric field alleviation region spaced apart from a heterojunction driving end of the heterojunction that contacts the gate insulation layer by a predetermined distance, a source electrode contacting the hetero semiconductor region and a drain electrode contacting the semiconductor substrate, the method comprising:
A method of manufacturing a semiconductor device including a semiconductor substrate, a hetero semiconductor region formed of a semiconductor material having a band gap width different from that of the semiconductor substrate and hetero-adjoined with the semiconductor substrate, a gate insulation layer contacting the semiconductor substrate and a heterojunction of the hetero semiconductor region, a gate electrode formed on the gate insulation layer, an electric field alleviation region spaced apart from a heterojunction driving end of the heterojunction that contacts the gate insulation layer by a predetermined distance, a source electrode contacting the hetero semiconductor region and a drain electrode contacting the semiconductor substrate, the method comprising:
A method of manufacturing a semiconductor device including a semiconductor substrate, a hetero semiconductor region formed of a semiconductor material having a band gap width different from that of the semiconductor substrate and hetero-adjoined with the semiconductor substrate, a gate insulation layer contacting the semiconductor substrate and a heterojunction of the hetero semiconductor region, a gate electrode formed on the gate insulation layer, an electric field alleviation region spaced apart from a heterojunction driving end of the heterojunction that contacts the gate insulation layer by a predetermined distance, a source electrode contacting the hetero semiconductor region and a drain electrode contacting the semiconductor substrate, the method comprising:
Dependencies are inferred from the claim text.