CMOS image sensor and method of manufacturing the same
AssigneeDongbu Electronics Co., Ltd.
InventorDae Hong Min
Life of this patent
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Abstract
Disclosed are a CMOS sensor and a method of fabricating the CMOS sensor. The method includes the steps of: forming a first USG layer on an entire surface of a semiconductor substrate including a cell area and a scribe area; masking the cell area, and then removing the first USG layer formed on the scribe area; forming a SiN layer on the entire surface of the semiconductor substrate; masking the cell area, and then removing the SiN layer formed on the scribe area; forming a second USG layer on the entire surface of the semiconductor substrate; and masking the scribe area, and then removing the second USG layer formed on the cell area. The USG layer is only formed on the scribe layer without the SiN layer, so that SiN particles do not drop onto the USG layer during the sintering process.
Claims11
A method of fabricating a CMOS sensor, the method comprising the steps of:
- forming a first oxide layer on an entire surface of a semiconductor substrate including a cell area and a scribe area, wherein the step of forming the first oxide layer includes the sub-steps of forming an oxide layer, forming a TEOS layer, and removing the TEOS layer and a predetermined portion of the oxide layer by chemical mechanical polishing (CMP);
- masking the cell area, and then removing the first oxide layer in the scribe area;
- forming a SiN layer on the entire surface of the semiconductor substrate;
- masking the cell area, and then removing the SiN layer in the scribe area;
- forming a second oxide layer on the entire surface of the semiconductor substrate;
- and
- masking the scribe area, and then removing the second oxide layer in the cell area.
Dependencies are inferred from the claim text.