Method of manufacturing a semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsTetsuya Kamigaki, Eiji Ito, Koji Hashimoto, Hideyuki Kinoshita
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Abstract
A method of manufacturing a semiconductor device, comprises forming a first mask pattern on an under-layer region, forming a plurality of dummy-line patterns on the under-layer region, the dummy-line patterns being arranged at a first pitch, forming second mask patterns having mask parts provided on long sides of the dummy-line patterns, removing the dummy-line patterns, and etching the under-layer region by using the first mask pattern and the mask parts as a mask.
Claims19
A method of manufacturing a semiconductor device, comprising:
- forming a first mask pattern on an under-layer region;
- forming a plurality of dummy-line patterns on the under-layer region, the dummy-line patterns being arranged at a first pitch;
- forming second mask patterns having mask parts provided on long sides of the dummy-line patterns, and a third mask pattern provided on sides of the first mask pattern;
- removing the dummy-line patterns;
- and
- etching the under-layer region by using the first mask pattern, the third mask pattern, and the mask parts as a mask,
- wherein the first mask pattern is protected and is not removed in removing the dummy-line patterns.
A method of manufacturing a semiconductor device, comprising:
- forming a plurality of dummy-line patterns on an under-layer region, the dummy-line patterns being arranged at a first pitch;
- forming mask patterns having mask parts provided on long sides of the dummy-line patterns, each of the mask patterns being shaped like a closed loop and surrounding each of the dummy-line patterns;
- removing the dummy-line patterns;
- removing both end parts of each of the mask patterns to leave the mask parts remaining;
- and
- etching the under-layer region by using the remaining mask parts as a mask.
Dependencies are inferred from the claim text.