Exposure apparatus and method
AssigneeRenesas Technology Corp.
InventorsMinori Noguchi, Yukio Kenbo, Yoshitada Oshida, Masataka Shiba, Yasuhiro Yoshitaka, Makoto Murayama
Life of this patent
Estimating the term…
Abstract
A production method of a semiconductor device which includes the steps of exposing a resist coated on a substrate of a semiconductor device by projecting a light pattern on the substrate of the semiconductor device, developing the resist exposed by the light pattern to form a wafer pattern with the resist, and etching the substrate on which the wafer pattern with the resist is formed. In the step of exposing the light pattern is formed by illuminating a mask with excimer laser light having an annular shape.
Claims10
A production method of a semiconductor device, comprising the steps of:
- exposing a resist coated on a substrate of a semiconductor device by projecting a light pattern on said substrate of said semiconductor device;
- developing said resist exposed by said light pattern to form a wafer pattern with said resist;
- and
- etching said substrate on which said wafer pattern with said resist is formed;
- wherein in the step of exposing, said light pattern is formed by illuminating a mask with excimer laser light having an annular shape.
A production method of a semiconductor device, comprising the steps of:
- exposing a resist coated on a substrate of a semiconductor device by projecting a light pattern on said substrate of said semiconductor device;
- developing said resist exposed by said light pattern to form a wafer pattern with said resist;
- and
- forming a pattern on said substrate by etching said substrate on which said wafer pattern with said resist is formed;
- wherein in the step of exposing, said light pattern is formed by illuminating a mask with excimer laser light emitted from plural light sources aligned in a ring-like arrangement.
A production method of a semiconductor device, comprising the steps of:
- exposing a resist coated on a substrate of a semiconductor device by projecting on said substrate a light pattern formed by excimer laser light having an annular shape and passed through a mask;
- developing said resist exposed by said light pattern of said excimer laser to form a pattern of said resist having a line width less than 0.2 μm;
- and
- etching said substrate on which said wafer pattern with said resist is formed.
A production method of a semiconductor device, comprising the steps of:
- exposing a resist coated on a substrate of a semiconductor device by projecting on said substrate a light pattern of excimer laser light emitted from plural light sources aligned in a ring-like arrangement;
- developing said resist exposed by said light pattern to form a pattern of said resist having a line width less than 0.2 μm;
- and
- forming a pattern on said substrate by etching said substrate on which said wafer pattern with said resist is formed.
Dependencies are inferred from the claim text.