Monomer, polymer and composition for photoresist
AssigneeDongjin Semichem Co., Ltd.
InventorsDeog-Bae Kim, Jung-Youl Lee, Geun-Jong Yu, Sang-Jung Kim, Jae-Woo Lee, Jae-Hyun Kim
Life of this patent
Estimating the term…
Abstract
The photoresist monomer including an oxime group, a polymer thereof and a photoresist composition containing the same are disclosed. The photoresist monomer is represented by following Formula. In Formula, R* is independently a hydrogen or a methyl group, and R is a substituted or unsubstituted C1˜C25 alkyl group with or without an ether group, or a substituted or unsubstituted C4˜C25 hydrocarbon group including an aryl group, a heteroaryl group, a cycloalkyl group or a multicycloalkyl group with or without an ether group, a ketone group or a sulfur.
Claims9
A photoresist monomer represented by following Formula 1
- In Formula 1, R* is independently a hydrogen or a methyl group, and R is a substituted or unsubstituted C1˜C25 alkyl group with or without an ether group, or a substituted or unsubstituted C4˜C25hydrocarbon group including an aryl group, a heteroaryl group, a cycloalkyl group or a multicycloalkyl group with or without an ether group, a ketone group or a sulfur.
A photoresist polymer containing a repeating unit represented by following Formula 2
- In Formula 2, R* is independently a hydrogen or a methyl group, and R is a substituted or unsubstituted C1˜C25alkyl group with or without an ether group, or a substituted or unsubstituted C4˜C25 hydrocarbon group including an aryl group, a heteroaryl group, a cycloalkyl group or a multicycloalkyl group with or without an ether group, a ketone group or a sulfur.
A photoresist composition comprising:
- a polymer containing monomer represented by following Formula 1;
- a photo-acid generator for generating an acid:
- and
- an organic solvent,
- wherein the amount of the photo-acid generator is 0.1 to 20 weight parts with respect to the 100 weight parts of the photoresist polymer, and the amount of the organic solvent is 300 to 5000 weight parts with respect to 100 weight parts of the photoresist polymer,
- In Formula 1, R* is independently a hydrogen or a methyl group, and R is a substituted or unsubstituted C1˜C25 alkyl group with or without an ether group, or a substituted or unsubstituted C4˜C25 hydrocarbon group including an aryl group, a heteroaryl group, a cycloalkyl or a multicycloalkyl group with or without an ether group, a ketone group or a sulfur.
A method for forming a photoresist pattern, comprising the steps of:
- a) coating a photoresist composition on a substrate to form a photoresist layer;
- b) exposing the photoresist layer to a light of a predetermined pattern;
- c) heating the exposed photoresist layer;
- and
- d) developing the heated photoresist layer to form the photoresist pattern,
- wherein the photoresist composition comprises a photoresist polymer containing monomer represented by following Formula 1, a photo-acid generator for generating an acid, and an organic solvent.
Dependencies are inferred from the claim text.