Fine pattern forming method
AssigneeTokyo Electron Limited
InventorsMasato Kushibiki, Akitaka Shimizu
Life of this patent
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Abstract
A fine pattern forming method includes the first step of depositing a plasma reaction products on a sidewall of a patterned mask layer to increase a pattern width thereof, the second step of etching a first etching target layer by using as a mask the mask layer, the pattern width of which has been increased, the third step of filling with a mask material a space formed in the etched first etching target layer, the fourth step of etching the etched first etching target layer leaving the mask material filling the space, and the fifth step of etching a second etching target layer by using a remaining mask material as a mask.
Claims12
A fine pattern forming method, comprising:
- the first step of depositing a plasma reaction products on a sidewall of a patterned mask layer to increase a pattern width thereof;
- the second step of etching a first etching target layer by using as a mask the mask layer, the pattern width of which has been increased;
- the third step of filling with a mask material a space formed in the etched first etching target layer;
- the fourth step of etching the etched first etching target layer leaving the mask material filling the space;
- and
- the fifth step of etching a second etching target layer by using a remaining mask material as a mask.
Dependencies are inferred from the claim text.