Method for extending time between chamber cleaning processes

A method of decreasing the frequency of chamber cleaning processes for a process chamber of a processing system, the method comprising:

• introducing one or more first substrates into the process chamber and heating a chamber component in the process chamber to a first temperature;
• performing a first manufacturing process on the one or more first substrates in the process chamber at the first temperature whereby a first film deposit is formed on the chamber component in the process chamber;
• removing the one or more first substrates from the process chamber;
• elevating the temperature of the chamber component in the process chamber to a second temperature greater than the first temperature;
• exposing the first film deposit on the chamber component in the process chamber to a reactant gas at the second temperature, wherein the reactant gas contains at least one of H2O, O2, O3, N2, NO, N2O, NO2, and NH3 to chemically modify at least a portion of the first film deposit to thereby form a nitride, oxide or oxynitride particle-reducing film on the chamber component;
• lowering the chamber component in the process chamber to the first temperature;
• introducing one or more second substrates into the process chamber;
• performing a second manufacturing process on the one or more second substrates in the process chamber at the first temperature whereby a new film deposit is formed on the particle-reducing film, and wherein the particle-reducing film reduces particle formation in the process chamber during processing of the one or more second substrates from one or both of the first film deposit or the new film deposit;
• and
• removing the one or more second substrates from the process chamber.