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US 7,604,840 B2Granted
Atomic layer deposition of copper using surface-activation agents
AssigneeE. I. Du Pont de Nemours and Company
InventorJeffery Scott Thompson
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Abstract
The present invention relates to a novel atomic layer deposition process for the formation of copper films on substrates or in or on porous solids in an atomic layer deposition process.
Claims17
A process for depositing copper films on a surface, comprising:
- a. exposing a substrate to a surface-activating agent to form a deposit of a surface-activating agent on the substrate, wherein the surface-activating agent is selected from the group consisting of imines and aromatic nitrogen heterocycles;
- b. exposing the deposit of the surface-activating group on the substrate to a copper precursor vapor to form a deposit of a copper complex adsorbed on the substrate;
- and
- c. reacting the adsorbed copper complex with a reducing agent to form a deposit of copper metal on the substrate.
1 more element
Dependencies are inferred from the claim text.