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US 7,604,834 B2Granted
Formation of dielectric film by alternating between deposition and modification
AssigneeIntel Corporation
InventorKramadhati V. Ravi
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Abstract
The present invention discloses a method including: providing a substrate; and sequentially stacking layers of two or more diamond-like carbon (DLC) films over the substrate to form a composite dielectric film, the composite dielectric film having a k value of about 1.5 or lower, the composite dielectric film having a Young's modulus of elasticity of about 25 GigaPascals or higher.
Claims4
A method comprising:
- providing a substrate;
- forming an interlayer dielectric (ILD) film over said substrate by alternating between a deposition step and a modification step, said deposition step comprising a source gas of 0.1-1.0% CH4/H2 by volume, said modification step comprising a source gas of 100% H2 by volume;
- forming a via and an overlying trench in said ILD;
- and
- forming an inlaid interconnect in said via and said overlying trench.
2 more elements
Dependencies are inferred from the claim text.