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US 7,604,751 B2Granted
Polishing liquid composition
AssigneeKao Corporation
InventorsYasuhiro Yoneda, Ryoichi Hashimoto, Toshiya Hagihara
Life of this patent
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Abstract
A polishing liquid composition is applicable as a means of forming embedded metal interconnections on a semiconductor substrate. In a surface to be polished comprising an insulating layer and a metal interconnection layer, the polishing liquid composition is capable of maintaining a polishing speed of the metal layer, of suppressing an etching speed, and of preventing dishing of the metal layer.
Claims12
A method comprising chemical mechanical polishing a surface comprising an insulating layer and a metal layer using a polishing liquid composition comprising
- an amine compound represented by the following general formula:
- wherein
- R3 is a linear or branched alkyl group having 4 to 18 carbon atoms, or
- a linear or branched alkenyl group having 4 to 18 carbon atoms, or
- an aryl group having 6 to 18 carbon atoms, or
- an aralkyl group having 7 to 18 carbon atoms;
- each of R4 and R5, which may be identical or different, is
- a linear alkyl group having 1 to 8 carbon atoms or
- a branched alkyl group having 3 to 8 carbon atoms, or
- a group represented by H—(OR6)z—wherein R6 is a linear alkylene group having 1 to 3 carbon atoms, or
- a branched alkylene group having 3 carbon atoms;
- and
- Z is a number of 1 to 20, and/or a salt thereof,
- an etching agent,
- at least one of an oxidizing agent and an abrasive, and
- water.
13 more elements
Dependencies are inferred from the claim text.