Heteroepitaxial growth method for gallium nitride
AssigneeYamaha Corporation
InventorsShingo Sakakibara, Yoku Inoue, Hidenori Mimura
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Abstract
A heteroepitaxial growth method for gallium nitride yields gallium nitride which contains good quality fine crystals and has excellent optical properties, on a quartz substrate or a silicon substrate. The method comprises a step A of nitriding the surface of the substrate, and a step B of depositing or vapor depositing at least one atom layer of gallium.
Claims13
A heteroepitaxial growth method for gallium nitride on the surface of a quartz substrate or a silicon substrate, the method comprising:
- nitriding the surface of the substrate;
- depositing or vapor depositing at least one atom layer of gallium;
- and
- forming gallium nitride crystal particle groups.
A heteroepitaxial growth method for gallium nitride on the surface of a quartz substrate, the method comprising:
- depositing or vapor depositing at least one atom layer of gallium on a nitride surface;
- and
- forming gallium nitride crystal particle groups.
Dependencies are inferred from the claim text.