Method for manufacturing a magnetoresistive multilayer film
AssigneeCanon Anelva Corporation
InventorsDavid Djulianto Djayaprawira, Koji Tsunekawa, Motonobu Nagai
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Abstract
A method for manufacturing a magnetoresistive multilayer film. An antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer are laminated on a substrate in this order. A film for the antiferromagnetic layer is deposited by a sputtering process as oxygen gas is added to a gas for sputtering. A film for an extra layer interposed between the substrate and the antiferromagnetic layer is deposited by a sputtering process as oxygen gas is added to a gas for sputtering. A film for the antiferromagnetic layer is deposited by a sputtering process with a gas mixture of argon and another gas of larger atomic number than argon.
Claims9
A method for manufacturing a magnetoresistive multilayer film, comprising
- laminating an antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer in this order on a substrate;
- wherein
- the antiferromagnetic layer is deposited by a sputtering process as a gas mixture of argon and another gas of larger atomic number than argon is used;
- the gas of larger atomic number than argon is krypton or xenon;
- a flow rate of the gas of larger atomic number is 10 percent or more relative to that of argon;
- the pinned-magnetization layer is the layer where direction of magnetization is pinned by coupling with the antiferromagnetic layer, and the free-magnetization layer is the layer where direction of magnetization is free;
- and
- the magnetoresistive multilayer film is a tunnel type.
A method for manufacturing a magnetoresistive multilayer film, comprising
- laminating an antiferromagnetie layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer in this order on a substrate;
- wherein
- the antiferromagnetie layer is deposited by a sputtering process as a gas mixture of argon and another gas of larger atomic number than argon is used;
- the gas of larger atomic number than argon is krypton or xenon;
- a flow rate of the gas of larger atomic number is 50 percent or more relative to that of argon;
- the pinned-magnetization layer is the layer where direction of magnetization is pinned by coupling with the antiferromagnetic layer, and the free-magnetization layer is the layer where direction of magnetization is free;
- and
- the magnetoresistive multilayer film is a tunnel type.
A method for manufacturing a magnetoresistive multilayer film, comprising
- laminating an antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer in this order on a substrate;
- wherein
- the antiferromagnetic layer is deposited by a sputtering process as a gas of larger atomic number than argon is used at a flow rate of 100 percent;
- the gas of larger atomic number than argon is krypton or xenon;
- the pinned-magnetization layer is the layer where direction of magnetization is pinned by coupling with the antiferromagnetic layer, and the free-magnetization layer is the layer where direction of magnetization is free;
- and
- the magnetoresistive multilayer film is a tunnel type.
Dependencies are inferred from the claim text.