Semiconductor laser and manufacturing process therefor
AssigneeNEC Electronics Corporation
InventorTetsuro Okuda
Life of this patent
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Abstract
There is provided a semiconductor laser comprising an n-InP substrate 1; a multilayer film including a strained MQW active layer 6 on the n-InP substrate 1; a p-electrode 18 on the multilayer film; a pair of grooves 15 separating the multilayer film in both edges of the p-electrode 18 and extending to the n-InP substrate 1; and a plurality of diffraction gratings formed in an area from one to the other of the pair of grooves 15 in a diffraction grating forming surface formed in the upper surface of the n-InP substrate 1 or the upper surface of any of the semiconductor films in the multilayer film.
Claims16
A process for manufacturing a semiconductor laser comprising:
- forming a multilayer film including an active layer on a semiconductor substrate;
- separating the multilayer film to form a pair of grooves extending into the semiconductor substrate;
- and
- forming an electrode on the multilayer film between the pair of grooves,
- wherein said forming the multilayer film on the semiconductor substrate comprises forming a plurality of diffraction gratings on a diffraction grating forming surface formed partially in an upper surface of the semiconductor substrate or an upper surface of any of the semiconductor films in the multilayer film,
- wherein said forming the pair of grooves comprises forming a plurality of diffraction gratings in entirely only a first area from one to another of the pair of the grooves, or forming a plurality of diffraction gratings in entirely the first area and in less than an entirety of a second area outside of the pair of grooves, and
- wherein when said forming the pair of grooves comprises forming a plurality of diffraction gratings in entirely the first area and partially a second area outside of the pair of grooves, said forming the pair of grooves comprises forming the plurality of diffraction gratings comprising forming diffraction gratings being in contact with the pair of grooves in the second area.
A semiconductor laser comprising:
- a semiconductor substrate;
- a multilayer film including an active layer on the semiconductor substrate;
- an electrode on the multi layer film;
- a pair of grooves separating the multilayer film in both edges of the electrode and extending to the semiconductor substrate;
- and
- a plurality of diffraction gratings formed in entirely only a first area from one to an other of the pair of grooves in a diffraction grating forming surface formed in an upper surface of the semiconductor substrate or an upper surface of any of the semiconductor films in the multilayer film, or formed in entirely the first area and in less than an entirety of a second area outside of the pair of grooves,
- wherein said pair of grooves separates an area to be current injected from a drawing end of said diffraction gratings.
Dependencies are inferred from the claim text.