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US 7,601,980 B2Granted
Dopant confinement in the delta doped layer using a dopant segregation barrier in quantum well structures
AssigneeIntel Corporation
InventorsMantu K. Hudait, Aaron A. Budrevich, Dmitri Loubychev, Jack T. Kavalieros, Suman Datta, Joel M. Fastenau, Amy W. K. Liu
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Abstract
A device grade III-V quantum well structure and method of manufacture is described. Embodiments of the present invention enable III-V InSb quantum well device layers with defect densities below 1×108 cm−2 to be formed. In an embodiment of the present invention, a delta doped layer is disposed on a dopant segregation barrier in order to confine delta dopant within the delta doped layer and suppress delta dopant surface segregation.
Claims18
A quantum well structure comprising:
- a lower barrier layer;
- a quantum well layer disposed above the lower barrier layer;
- a spacer layer disposed above the quantum well layer;
- a dopant segregation barrier layer disposed above the spacer layer;
- a delta doped layer disposed on the dopant segregation layer;
- and
- a top barrier layer disposed above the delta doped layer;
- wherein the quantum well layer has a narrower band gap than the bottom barrier layer and spacer layer.
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A quantum well structure comprising:
- a lower barrier layer;
- a quantum well layer disposed above the lower barrier layer;
- and
- an upper barrier layer disposed above the quantum well layer, the upper barrier layer comprising a spacer layer, a dopant segregation barrier layer ,and top barrier layer;
- wherein the top barrier layer is less than or equal to 50 angstroms thick, and the upper barrier layer contains a doping profile having a peak concentration greater than 1.0E+18/cm3.
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Dependencies are inferred from the claim text.