US 7,599,584 B2Granted

Planar MID-IR integrated microphotonics

AssigneeMassachusetts Institute of Technology

InventorsJuejun Hu, Anuradha M. Agarwal, Lionel C. Kimerling

Life of this patent

Estimating the term…

Loading patent…

Abstract

A planar mid-infrared (mid-IR) integrated microphotonic platform includes at least one laser performing lasing functions. The at least one laser comprises chalcogenide glass. At least amplifier structure is coupled to the at least one laser for performing optical amplification. The at least amplifier structure comprises chalcogenide glass. At least one waveguide structure is coupled to the at least one amplifier structure for guiding an optical signal in the microphotonic platform. The at least waveguide structure comprises chalcogenide glass. At least one modulator structure is coupled to the at least one waveguide structure for modulating the optical signal. The at least modulator structure comprises chalcogenide glass. At least one photodetector is coupled to the at least one modulator structure for performing photodetecting functions of the microphotonic platform. The at least photodetector comprises chalcogenide glass. At least one optical sensor is coupled to the at least one photodetector for performing optical sensing functions of the microphotonic platform. The at least optical sensor comprises chalcogenide glass.

Claims32

Dependent claims

A planar mid-infrared (mid-IR) integrated microphotonic platform comprising:

at least one laser for performing lasing functions, said at least one laser comprises chalcogenide glass;
at least amplifier structure being coupled to said at least one laser for performing optical amplification, said at least amplifier structure comprises chalcogenide glass;
at least one waveguide structure being coupled to said at least one amplifier structure for guiding an optical signal in said microphotonic platform, said at least waveguide structure comprises chalcogenide glass;
at least one modulator structure being coupled to said at least one waveguide structure for modulating said optical signal, said at least modulator structure comprises chalcogenide glass;
and
at least one photodetector being coupled to said at least one modulator structure for performing photodetecting functions of said microphotonic platform;
said at least photodetector comprises chalcogenide glass;
and at least one optical sensor being coupled to said at least one photodetector for performing optical sensing functions of said microphotonic platform, said at least optical sensor comprises chalcogenide glass;
wherein
the chalcogenide glass is morphologically modified at its glass transition temperature to remove surface roughness on the various components of said planar mid-IR integrated platform and said microphotonic platform comprising a Si-CMOS-compatible platform.

7 more elements

Dependencies are inferred from the claim text.

Facts

Application: 11/543,333Filed 5 Oct 2006 · us provisional application
Priority: 5 Oct 2005
Published: US 2007/0110358 A117 May 2007
Granted: 6 Oct 2009
Term ends: Not estimatedThe source records don’t support an estimate.

Classification6 codes

G02B 6/102
Of the optical waveguide type: for infrared and ultraviolet radiation
G02B 6/12004
Of the integrated circuit kind: combinations of two or more optical elements
G02B 6/13
Of the integrated circuit kind: integrated optical circuits characterised by the manufacturing method
H10F 77/413
Optical elements or arrangements: directly associated or integrated with the devices, e.g. back reflectors