Superluminescent diode and method of manufacturing the same

A superluminescent diode (SLD) comprising:

• an InP substrate having a LD (laser diode) region and a SOA (semiconductor optical amplifier) region for amplifying light emitted from the LD region;
• an optical waveguide having a BRS (buried ridge stripe) structure having an active layer of resonant stripe pattern formed on the InP substrate and extending from the SOA region to the LD region wherein the active layer comprising a plurality of alternating unstrained barrier layers and strained quantum well layers, wherein the unstrained barrier avers comprise unstrained barrier InGaAsP layers and the strained quantum well layers comprise strained quantum well InGaAsP layers,
• wherein the unstrained InGaAsP barrier layers having an emission wavelength of about 1.68 μm and the strained quantum well InGaAsP layers having an emission wavelength of about 1.3 μm;
• a first electrode formed on the active layer in the SOA region;
• a second electrode formed on the active layer in the LD region and electrically isolated from the first electrode;
• and
• a current blocking region interposed between the first electrode and the second electrode to electrically isolate the first electrode and the second electrode from each other.

A superluminescent diode (SLD) comprising:

• an InP substrate having a LD (laser diode) region and a SOA (semiconductor optical amplifier) region for amplifying light emitted from the LD region;
• an optical waveguide having a BRS (buried ridge stripe) structure having an active layer of resonant stripe pattern formed on the InP substrate and extending from the SOA region to the LD region wherein the active layer comprising a plurality of alternating unstrained barrier layers and strained quantum well layers, wherein the unstrained barrier layers comprise unstrained barrier InGaAsP layers and the strained quantum well layers comprise strained quantum well InGaAsP layers,
• a first electrode formed on the active layer in the SOA region;
• a second electrode formed on the active layer in the LD region and electrically isolated from the first electrode;
• and
• a current blocking region interposed between the first electrode and the second electrode to electrically isolate the first electrode and the second electrode from each other
• wherein the SLD emits a relative high optical emission power of at least 20 mW when a LD current of about 100 mA in injected into the LD region and a SOA current of about 200 mA is injected into the SOA region.