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US 7,599,242 B2Granted
Test circuit for multi-port memory device
AssigneeHynix Semiconductor Inc.
InventorsHwang Hur, Chang-Ho Do
Life of this patent
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Abstract
A semiconductor memory device includes a read bus line for transferring read data; a write bus line for transferring write data; and a temporary data storage unit connected between the read bus line and the write bus line and controlled by a test mode signal enabled during a test mode.
Claims17
A semiconductor memory device, comprising:
- a read bus line for transferring read data;
- a write bus line for transferring write data;
- and
- a temporary data storage unit connected between the read bus line and the write bus line and controlled by a test mode signal enabled during a test mode.
1 more element
Dependencies are inferred from the claim text.