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US 7,599,233 B2Granted
RFID device having nonvolatile ferroelectric memory device
AssigneeHynix Semiconductor Inc.
InventorHee Bok Kang
Life of this patent
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Abstract
An RFID device is provided to perform a pumping operation when a read or write operation of a memory cell is performed to reduce current consumption. The RFID device includes an analog block, a digital block, and a memory block including at least one ferroelectric capacitor, and a voltage pumping unit for supplying the memory cell a pumping voltage higher than a power voltage only when the memory cell is operated.
Claims23
An RFID device comprising:
- an analog block configured to receive a radio frequency signal and to output an operation command signal, the radio frequency signal supplying a power voltage having a power voltage level;
- a digital block configured to generate an address and an operating control signal in response to the operation command signal received from the analog block, and to output a response signal corresponding to the operating control signal to the analog block;
- and
- a memory block including at least one ferroelectric capacitor, the memory block configured to receive the operating control signal to generate an internal control signal and store data in a memory cell in response to the internal control signal,
- wherein the memory block includes a voltage pumping unit configured to supply a pumping voltage higher than the power voltage to the memory cell when the memory cell is operated.
2 more elements
Dependencies are inferred from the claim text.