Memory cell device and manufacturing method

A memory cell device of the type including a phase change material switchable between generally amorphous and generally crystalline states by the application of energy, the memory cell device comprising:

• a first electrode having an electrode surface;
• a first material over the electrode surface to create a separation layer having an upper surface;
• the first material defining a hole bounded by a side wall within the separation layer, a bottom and a plane defined by the upper surface;
• a high density plasma-deposited second material on the side wall and on the upper surface of the separation layer;
• the second material defining a void, the void having a first downwardly and inwardly tapering void region above the plane of the upper surface and a second downwardly and inwardly tapering void region below the plane of the upper surface, the second void region having an upper portion and a lower portion;
• a phase change material in the lower portion of the second void region and in direct electrical contact with the electrode surface;
• and
• a second electrode over the second material and within the upper portion of the second void region and in direct contact with the phase change material;
• whereby energy passing between the first and second electrodes is concentrated within the phase change material at the electrode surface so to facilitate changing the electrical resistance of the phase change material.