Phase change memory devices and fabrication methods thereof

A method for fabricating a phase change memory device, the method comprising:

• providing a substrate having a first electrode pattern;
• forming a first insulation layer on the substrate to cover the first electrode pattern;
• patterning the first insulation layer to form an opening exposing a portion of the first electrode pattern;
• forming a phase change material layer with a first thickness on the first insulation layer to cover a sidewall of the opening and on the portion of the first electrode pattern;
• depositing a protective layer with a second thickness on the phase change material layer;
• etching the protective layer and the phase change material film in sequence until exposing the upper surface of the first insulating layer to thereby form a phase change material pattern;
• depositing a second insulation layer to cover the first insulation layer on the semiconductor substrate;
• planarizing the second insulation layer to expose an upper surface of the phase change material pattern;
• and
• forming a second electrode on the second insulation layer to contact a portion of the phase change material pattern.