Integrated circuit, resistivity changing memory device, memory module and method of fabricating an integrated circuit

An integrated circuit comprising a resistivity changing memory device, the integrated circuit comprising:

• a plurality of resistivity changing memory cells:
• a plurality of conductive elements that are electrically connected to the resistivity changing memory cells, at least some of the conductive elements comprising copper, wherein the conductive elements guide electric currents or voltages through the memory device;
• and
• additional conductive elements guiding electric currents or voltages between a substrate of the memory device and a substrate voltage/current terminal, the additional conductive elements comprising copper.

An integrated circuit comprising a resistivity changing memory device, the memory device comprising a memory cell region and a peripheral region, the memory device further comprising conductive wiring layers, conductive plugs or conductive vias being arranged within the memory cell region and the peripheral region;

• wherein the wiring layers, plugs and vias consist of copper;
• wherein the wiring layers, plugs and vias are arranged within the memory cell region and guide electric currents supplied to or received from memory cells;
• and
• wherein the wiring layers, plugs and vias are arranged within the peripheral region and guide electric currents supplied to or received from a substrate of the memory device.

A memory module comprising at least one resistivity changing memory device comprising:

• a plurality of resistivity changing memory cells;
• and
• a plurality of conductive elements that are electrically connected to the resistivity changing memory cells, at least some of the conductive elements comprising copper;
• wherein the conductive elements guide electric currents or voltages through the memory device;
• and
• wherein at least some of the conductive elements guide electric currents or voltages between a common memory cell top electrode or a plurality of memory cell top electrodes and a memory cell writing unit or a memory cell reading unit.