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US 7,599,205 B2Granted
Methods and apparatus of stacking DRAMs
AssigneeMetaram, Inc.
InventorSuresh N. Rajan
Life of this patent
Estimating the term…
Abstract
Large capacity memory systems are constructed using stacked memory integrated circuits or chips. The stacked memory chips are constructed in such a way that eliminates problems such as signal integrity while still meeting current and future memory standards.
Claims32
A memory device for electrical connection to a memory bus, the memory device comprising:
- a plurality of dynamic random access memory ( “DRAM”) integrated circuits, each DRAM integrated circuit comprising a memory core of a plurality of cells and accessible at a first speed;
- and
- an interface integrated circuit electrically coupled to the plurality of DRAM integrated circuits for providing an interface between the DRAM integrated circuits and the memory bus at a second speed;
- wherein the interface integrated circuit is adapted for providing a predetermined electrical load on the memory bus independent of a number of the DRAM integrated circuits to which the interface integrated circuit is electrically coupled.
1 more element
A memory device for use with a memory bus, the memory bus comprising:
- a plurality of dynamic random access memory (“DRAM”) integrated circuits each comprising a memory core of a plurality of cells accessible at low speed;
- and
- an interface integrated circuit for providing an interface, at a high speed relative to the low speed, between the DRAM integrated circuits and the memory bus;
- wherein the interface integrated circuit is adapted for providing a predetermined electrical load on the memory bus independent of a number of the DRAM integrated circuits to which the interface integrated circuit is electrically coupled.
1 more element
A memory device for use with a memory bus, the memory bus comprising:
- means for stacking a plurality of dynamic random access memory (“DRAM”) integrated circuits each comprising a memory core of a plurality of cells accessible at a first speed;
- and
- means for providing an interface between the DRAM integrated circuits and the memory bus at a second speed;
- wherein the means for providing the interface is adapted for providing a predetermined electrical load on the memory bus independent of a number of the DRAM integrated circuits to which the means for providing the interface is electrically coupled.
1 more element
A memory device for electrical connection to a memory bus, the memory device comprising:
- a plurality of dynamic random access memory (“DRAM”) integrated circuits, each DRAM integrated circuit comprising a memory core of a plurality of cells and accessible at a first speed;
- and
- an interface integrated circuit electrically coupled to the plurality of DRAM integrated circuits for providing an interface between the DRAM integrated circuits and the memory bus at a second speed;
- wherein the interface integrated circuit is adapted for providing an electrical load on the memory bus independent of a number of the DRAM integrated circuits to which the interface integrated circuit is electrically coupled;
- wherein the plurality of DRAM integrated circuits comprise;
- a working pool of“p” DRAM integrated circuits;
- and
- a spare pool of“q”DRAM integrated circuits;
- wherein “p” and “q”comprise integer values.
6 more elements
Dependencies are inferred from the claim text.