Stabilized spin valve head and method of manufacture

A magnetic sensor having a spin valve, comprising:

• a free layer having an adjustable magnetization direction in response to a magnetic flux;
• a pinned layer having a fixed magnetization in accordance with a first antiferromagnetic (AFM) layer positioned on a surface of said pinned layer opposite a spacer sandwiched between said pinned layer and said free layer;
• a buffer sandwiched between said first AFM layer and a bottom shield that shields undesired flux at a first outer surface of said magnetic sensor;
• a capping layer sandwiched between said free layer and a top shield that shields undesired flux at a second outer surface of said magnetic sensor;
• a side shield positioned on a side of said magnetic sensor;
• and
• an in-stack bias positioned between said capping layer and said top shield vertically and comprising a second AFM layer and a conductive layer, wherein said in-stack bias is substantially wider than said free layer, the in-stack bias extending to cover at least a part of theside shield, and wherein the conductive layer and the second AFM layer cover a same area.

A magnetic sensor having a spin valve, comprising:

• a free layer having an adjustable magnetization direction in response to a magnetic flux;
• a pinned layer having a fixed magnetization in accordance with a first antiferromagnetic (AFM) layer positioned on a surface of said pinned layer opposite a spacer sandwiched between said pinned layer and said free layer;
• a buffer sandwiched between said first AFM layer and a bottom shield that shields undesired flux at a first outer surface of said magnetic sensor;
• a capping layer sandwiched between said free layer and a top shield that shields undesired flux at a second outer surface of said magnetic sensor;
• a side shield positioned on a side of said magnetic sensor;
• and
• an in-stack bias positioned between said capping layer and said top shield vertically, wherein said in-stack bias is substantially wider than said free layer, the in-stack bias extending to cover at least a part of the side shield, and wherein the in-stack bias is a synthetic layer comprising at least a second AFM layer that is substantially wider than said free layer.