Back to results
US 7,598,809 B2Granted
RF power amplifier
AssigneeSilicon Storage Technology, Inc.
InventorBun Kobayashi
Life of this patent
Estimating the term…
Abstract
An RF power amplifier includes a plurality of amplifier cells. Each amplifier cell includes a bipolar transistor and a base circuit that comprises an RF coupling capacitor, a bias resistor, a base capacitor, and a base resistor. The base circuit transmits DC bias current and an RF signal to the base of the bipolar transistor to provide a selectable frequency response. The base circuit may be implemented using a structure of stacked capacitors.
Claims11
An RF power amplifier comprising:
- a plurality of amplifier cells, each amplifier cell comprising a bipolar transistor and a base circuit,
- each bipolar transistor including a collector coupled to an output node, including a base, and including an emitter coupled to a ground node,
- each base circuit including an RF input node for receiving an RF signal, including a bias voltage node for receiving a bias voltage, and including a base node coupled to the base of the bipolar transistor, each base circuit comprising a parallel resistor-capacitor circuit including a first node coupled to said bias voltage node and said RF input node, and including a second node coupled to said base node, and wherein the base circuit includes a first circuit to control sub-harmonics of the bipolar transistor and a second circuit to provide ballast to control current collapse of the bipolar transistor.
An RF power amplifier comprising:
- a plurality of amplifier cells, each amplifier cell comprising a bipolar transistor and a base circuit;
- each bipolar transistor including a collector coupled to an output node, including a base, and including an emitter coupled to a ground node;
- each base circuit including an RF input node for receiving an RF signal, including a bias voltage node for receiving a bias voltage, and including a base node coupled to the base of the bipolar transistor;
- wherein each base circuit comprises:
- a first capacitor including a first node coupled to the RF input node and including a second node;
- a first resistor including a first node coupled to the bias voltage node and including a second node coupled to the second node of the first capacitor;
- a second capacitor including a first node coupled to the second node of the first capacitor and including a second node coupled to the base of the bipolar transistor;
- and
- a second resistor including first and second nodes coupled to the respective first and second nodes of the second capacitor.
6 more elements
An RF power amplifier comprising:
- a bipolar transistor including a collector coupled to an output node, including a base, and including an emitter coupled to a ground node, and
- a base circuit including an RF input node for receiving an RF signal, including a bias voltage node for receiving a bias voltage, and including a base node coupled to the base of the bipolar transistor, the base circuit comprising a parallel resistor-capacitor circuit including a first node coupled to said bias voltage node and said RF input node, and including a second node coupled to said base node, and wherein the base circuit includes a first circuit coupled to the base of the bipolar transistor to control sub-harmonics of the bipolar transistor and includes a second circuit coupled to the base of the bipolar transistor to provide ballast to control current collapse of the bipolar transistor.
An RF power amplifier comprising:
- a bipolar transistor including a collector coupled to an output node, including a base, and including an emitter coupled to a ground node;
- and
- a base circuit including an RF input node for receiving an RF signal, including a bias voltage node for receiving a bias voltage, and including a base node coupled to the base of the bipolar transistor,
- wherein the base circuit comprises:
- a first capacitor including a first node coupled to the RF input node and including a second node;
- a first resistor including a first node coupled to the bias voltage node and including a second node coupled to the second node of the first capacitor;
- a second capacitor including a first node coupled to the second node of the first capacitor and including a second node coupled to the base of the bipolar transistor;
- and
- a second resistor including first and second nodes coupled to the respective first and second nodes of the second capacitor.
6 more elements
Dependencies are inferred from the claim text.