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US 7,598,612 B2Granted
Semiconductor device and manufacturing method thereof
AssigneeSeiko Epson Corporation
InventorTakeshi Yuzawa
Life of this patent
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Abstract
A semiconductor device including a semiconductor substrate containing a plurality of electrode pads and a passivation film with an opening that exposes a central area of each of the electrode pads, and a bump electrically connected to each of the electrode pads, the bump being disposed to overlap the opening and an end of the opening, wherein at least part of an area contacting the bump on a surface of the passivation film is an uneven surface.
Claims6
A semiconductor device, comprising:
- a semiconductor substrate containing an electrode pad and a passivation film with an opening that exposes a central area of the electrode pad, the passivation film including a first surface and a second surface opposite the first surface, with at least a part of the first surface facing the electrode pad;
- and
- a bump electrically connected to the electrode pad, the bump being disposed to directly overlap the opening, an end of the opening and a first area of the second surface;
- wherein at least a part of the first area of the second surface includes a first recess being entirely defined by the passivation film, at least a part of a surface of the electrode pad includes a second recess, and the first recess is formed to directly overlap the second recess.
1 more element
Dependencies are inferred from the claim text.