Semiconductor device having capacitive insulation means and communication terminal using the device

A semiconductor device comprising:

• a first semiconductor substrate;
• a second semiconductor substrate;
• a primary side circuit provided on said first semiconductor substrate;
• a secondary side circuit provided on said second semiconductor substrate;
• a capacitive insulator provided on said second semiconductor substrate adapted to electrically insulate and isolate said primary side circuit and said secondary side circuit from one another while permitting signal transmission between said primary side circuit and said secondary side circuit;
• a printed wiring board supporting thereover said first semiconductor substrate and second semiconductor substrate,
• a first printed wiring board lead on said printed wiring board for signal input and output to and from said primary side circuit;
• and
• a second printed wiring board lead on said printed wiring board for signal input and output to and from said secondary side circuit,
• wherein an external electrode of said capacitive insulator is connected to a bonding wiring adapted to input and output a signal to and from the primary side circuit.

A semiconductor device comprising:

• a first semiconductor substrate;
• a second semiconductor substrate;
• a primary side circuit provided on said first semiconductor substrate;
• a secondary side circuit provided on said second semiconductor substrate;
• a capacitive insulator provided on said second semiconductor substrate adapted to electrically insulate and isolate said primary side circuit and said secondary side circuit from one another while permitting signal transmission between said primary side circuit and said secondary side,
• wherein said first and second substrates are supported by a support means comprised of one of:
• (a) a printed wiring board having a first printed wiring board lead adapted to input and output a signal to and from said primary side circuit, a second printed wiring board lead adapted to input and output a signal to and from said secondary side circuit and a bonding wire adapted to connect to an external electrode of said capacitive insulator and adapted to input and output a signal to and from the primary side circuit;
• or (b) first and second lead frames and a bonding wire said first lead frame being located to permit signal input and output to and from said primary side circuit, said second lead from being located to permit signal input and output to and from said secondary side circuit and said bonding wire being located to connect to an external electrode of said capacitive insulator.

A semiconductor device comprising:

• a first semiconductor substrate;
• a second semiconductor substrate;
• a primary side circuit provided on said first semiconductor substrate;
• a secondary side circuit provided on said second semiconductor substrate;
• capacitive insulating means provided on said second semiconductor substrate for electrically insulating and isolating said primary side circuit and said secondary side circuit from one another while permitting signal transmission between said primary side circuit and said secondary side circuit;
• a first lead frame adapted to input and output a signal to and from said primary side circuit;
• and
• a second lead frame adapted to input and output a signal to and from the secondary side circuit,
• wherein an external electrode of said capacitive insulating means is connected to a bonding wire adapted to input and output a signal to and from the primary side circuit.

A semiconductor device comprising:

• a first semiconductor substrate;
• a second semiconductor substrate;
• a primary side circuit provided on said first semiconductor substrate;
• a secondary side circuit provided on said second semiconductor substrate;
• a capacitive insulating means provided on said second semiconductor substrate for electrically insulating and isolating said primary side circuit and said secondary side circuit from one another while permitting signal transmission between said primary side circuit and said secondary side circuit;
• a printed wiring board supporting thereover said first semiconductor substrate and second semiconductor substrate,
• a first printed wiring board lead on said printed wiring board for signal input and output to and from said primary side circuit;
• and
• a second printed wiring board lead on said printed wiring board for signal input and output to and from said secondary side circuit,
• wherein an external electrode of said capacitive insulating means is connected to a bonding wire adapted to input and output a signal to and from the primary side circuit.

A semiconductor device comprising:

• a first semiconductor substrate;
• a second semiconductor substrate;
• a primary side circuit provided on said first semiconductor substrate;
• a secondary side circuit provided on said second semiconductor substrate;
• a capacitive insulating means provided on said second semiconductor substrate for electrically insulating and isolating said primary side circuit and said secondary side circuit from one another while permitting signal transmission between said primary side circuit and said secondary side circuit;
• wherein said first and second substrates are supported by a support means comprised of one of:
• (a) a printed wiring board having a first printed wiring board lead adapted to input and output a signal to and from said primary side circuit, a second printed wiring board lead adapted to input and output a signal to and from said secondary side circuit and a bonding wire adapted to connect to an external electrode of said capacitive insulating means and adapted to input and output a signal to and from the primary side circuit or (b) first and second lead frames and a bonding wire, said first lead frame being located to permit signal input and output to and from said primary side circuit, said second lead from being located to permit signal input and output to and from said secondary side circuit and said bonding wire being located to connect to an external electrode of said capacitive insulating means.