Semiconductor structure and method of manufacture

A semiconductor device, comprising:

• a semiconductor material;
• a plurality of rectilinear structures, wherein the plurality of rectilinear structures comprise silicon dioxide and extend from a surface of the semiconductor material to a distance of at least about three microns or greater below the surface of the semiconductor material and wherein a first rectilinear structure of the plurality of rectilinear structures is perpendicular to, or substantially perpendicular to, a second rectilinear structure of the plurality of rectilinear structures;
• and
• a dielectric structure disposed in said semiconductor material, said dielectric structure comprising said plurality of rectilinear structures, said rectilinear structures defining a plurality of voids formed therein to reduce a dielectric constant of the dielectric structure by about 30% or greater and wherein the plurality of rectilinear structures are patterned to comprise a plurality of orthogonally walled structures such that stress vectors from abutting cells of the dielectric structure are aligned in opposite directions to reduce stress in the dielectric structure.

A semiconductor structure, comprising:

• a semiconductor material;
• and
• an element comprising a plurality of rectilinear segments, wherein the plurality of rectilinear segments comprise silicon dioxide and extend from a surface of the semiconductor material to a distance of at least about three microns or greater below the surface of the semiconductor material, wherein a first rectilinear segment of the plurality of rectilinear segments is spaced apart from a second rectilinear segment of the plurality of rectilinear segments by a first distance, wherein a length of each rectilinear segment of the plurality of rectilinear segments is equal to or less than about 4.5 times (4.5×) the first distance;
• said plurality of rectilinear segments defining a plurality of voids formed therein to reduce a dielectric constant of element by about 30% or greater and wherein the plurality of rectilinear segments are patterned to comprise a plurality of orthogonally walled structures such that stress vectors from abutting cells of the element are aligned in opposite directions to reduce stress in the element.

A semiconductor device, comprising:

• a semiconductor material;
• and
• a structure comprising silicon dioxide embedded in the semiconductor material and comprising a first portion, a second portion, and a third portion, the first portion is parallel, or substantially parallel to, the second portion, the first portion is spaced apart from the second portion by a first distance, a width of the first portion is less than the first distance, and the first portion intersects the third portion at an angle greater than zero degrees and less than 180 degrees;
• the first, second, and third portions defining a plurality of voids formed therein to reduce a dielectric constant of the structure by about 30% or greater and wherein the first, second, and third structures are patterned to comprise a plurality of orthogonally walled structures such that stress vectors from abutting cells of the structure are aligned in opposite directions to reduce stress in the structure.