Back to results
US 7,598,585 B2Granted
Structure for preventing leakage of a semiconductor device
AssigneeHimax Technologies Limited
InventorChan-Liang Wu
Life of this patent
Estimating the term…
Abstract
A structure for preventing leakage of a semiconductor device is provided. The structure comprises a conductive layer, for shielding the features beneath thereof, located under a conductive line which crosses over a region having high voltage device. The conductive layer is wider than the conductive line.
Claims7
A structure for preventing leakage of a semiconductor device, comprising:
- a high-voltage semiconductor device on a substrate;
- a guard ring on the substrate and surrounding the high-voltage semiconductor device;
- a conductive line above the substrate and crossing over a region between the high-voltage semiconductor device and the guard ring;
- and
- a shielding line above the region and between the conductive line and the substrate for shielding the high-voltage semiconductor device from the conductive line to prevent leakage of the high-voltage semiconductor, wherein the shielding line is wider than the conductive line.
2 more elements
Dependencies are inferred from the claim text.