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US 7,598,583 B2Granted
Image sensor
AssigneeDongbu HiTek Co., Ltd.
InventorJae Won Han
Life of this patent
Estimating the term…
Abstract
An image sensor according to embodiments may include a first substrate having photodiode cells, a second substrate having a logic circuit, and connection electrodes that may electrically connect the photodiode cells with the logic circuit. In embodiments, more area may be available on the first substrate for photodiode cells and light loss may be reduced.
Claims10
A device, comprising:
- a photodiode cell over a first semiconductor substrate;
- a color filter over the photodiode cell;
- a through electrode electrically coupled to the photodiode cell and passing through the first semiconductor substrate;
- a logic circuit having a transistor and a metal layer formed on a second substrate;
- an electrode configured to electrically couple the photodiode to the logic circuit, and
- a connection electrode configured to electrically couple the through electrodes to an uppermost metal layer of the metal layer,
- wherein the through electrode comprises at least one of W, Cu, Al, Ag and Au,
- wherein the through electrode, the connection electrode and the metal layer are disposed on the same vertical line.
5 more elements
A device, comprising:
- a photodiode cell formed on a first semiconductor substrate;
- a color filter over the photodiode cell;
- a through electrode electrically coupled to the photodiode cell and passing through the first semiconductor substrate;
- a transistor layer comprising at least one transistor over a second semiconductor substrate;
- at least one metal layer over the transistor layer;
- and
- a connection electrode configured to electrically couple the through electrode to the at least one metal layer,
- wherein the through electrode comprises at least one of W, Cu, Al, Ag and Au,
- wherein the through electrode, the connection electrode, and the metal layer are disposed on the same vertical line.
6 more elements
Dependencies are inferred from the claim text.