Image sensor with decreased optical interference between adjacent pixels
AssigneeCrosstek Capital, LLC
InventorsWon-Ho Lee, Dong-Heon Cho
Life of this patent
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Abstract
An image sensor with decreased optical interference between adjacent pixels is provided. An image sensor, which is divided into a pixel region and a peripheral region, the image sensor including a photodiode formed in a substrate in the pixel region, first to Mth metal lines formed over the substrate in the pixel region, where M is a natural number greater than approximately 1, first to Nth metal lines formed over a substrate in the peripheral region, where N is a natural number greater than M, at least one layer of dummy metal lines formed over the Mth metal lines but formed not to overlap with the photodiode, and a microlens formed over the one layer of the dummy metal lines to overlap with the photodiode.
Claims16
An image sensor, that is divided into a pixel region and a peripheral region, the image sensor comprising:
- a photodiode formed in a substrate in the pixel region;
- first to Mth metal lines formed over the substrate in the pixel region, where M is a natural number greater than approximately 1;
- first to Nth metal lines formed over a substrate in the peripheral region, where N is a natural number greater than M;
- at least one layer of dummy metal lines formed over the Mth metal lines but formed not to overlap with the photodiode;
- and
- a microlens formed over the at least one layer of the dummy metal lines to overlap with the photodiode.
An image sensor, that is divided into a pixel region and a peripheral region, the image sensor comprising:
- a photodiode formed in a substrate in the pixel region;
- first to Mth metal lines formed over the substrate in the pixel region, where M is a natural number greater than approximately 1;
- first to Nth metal lines formed over a substrate in the peripheral region, where N is a natural number greater than M;
- at least one layer of dummy metal lines formed over the Mth metal lines to cover a portion that is not overlapped with the photodiode;
- and
- a microlens formed over the at least one layer of dummy metal lines to overlap with the photodiode.
An image sensor, that is divided into a pixel region and a peripheral region, the image sensor comprising:
- a photodiode formed in a substrate in the pixel region;
- first to Mth metal lines formed over the substrate in the pixel region, where M is a natural number greater than approximately 1;
- first to Nth metal lines formed over a substrate in the peripheral region, where N is a natural number greater than M;
- at least one layer of dummy metal lines formed over the Mth metal lines by having an insulation layer between the dummy metal lines and the Mth metal lines but formed not to overlap with the photodiode;
- and
- a microlens formed over the at least one layer of dummy metal lines to overlap with the photodiode.
An image sensor, that is divided into a pixel region and a peripheral region, the image sensor comprising:
- a photodiode formed in a substrate in the pixel region;
- first to Mth metal lines formed over the substrate in the pixel region, where M is a natural number greater than approximately 1;
- first to Nth metal lines formed over a substrate in the peripheral region, where N is a natural number greater than M;
- at least one layer of dummy metal lines formed in contact with the Mth metal lines but not to overlap with the photodiode, the dummy metal line used as a via contact and including a metal;
- and
- a microlens formed over the at least one layer of dummy metal lines to overlap with the photodiode.
An image sensor is divided into a pixel region and a peripheral region, the image sensor comprising:
- a photodiode formed in a substrate in the pixel region;
- first to Mth metal lines formed over the substrate in the pixel region, where M is a natural number greater than approximately 1;
- first to Nth metal lines formed over a substrate in the peripheral region, where N is a natural number greater than M;
- at least one layer of first dummy metal lines formed over the Mth metal lines not to overlap with the photodiode;
- at least one layer of second dummy metal lines formed to contact with the at least one layer of the first dummy metal line;
- and
- a microlens formed over the at least one layer of second dummy metal lines to overlap with the photodiode.
Dependencies are inferred from the claim text.